elektronische bauelemente 2sa1162 -0.15a, -50v pnp silicon general purpose transistor 31-dec-2010 rev. c page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen and lead free features ? low noise: nf=1 db(typ.), 10 db(max.) ? complements of the 2sc2712 mechanical data ? case: sot-23, molded plastic ? weight: 0.008 grams(approx.) classification of h fe product-rank 2sa1162-o 2sa1162-y 2sa1162-gr range 70~140 120~240 200~400 marking so sy sg package information package mpq leadersize sot-23 3k 7? inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector currrent i c -150 ma total device dissipation p d 150 mw junction & storage temperature t j , t stg 125, -55 ~ 150 electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -50 - - v i c =-100 a, i e =0 collector-emitter breakdown voltage v (br)ceo -50 - - v i c =-1 ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e =-100 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb =-50v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 collector-emitter saturation voltage v ce(sat) - - -0.3 v i c =-100ma, i b =-10ma dc current gain h fe 70 - 400 v ce =-6v, i c =-2ma transition frequency f t 80 - - mhz v ce =-10v, i c =-1ma collector output capacitance c ob - - 7 pf v cb =-10v, i e =0, f=1mhz noise figure nf - - 10 db v cb =-6v, i c =0.1ma, f=1mhz, rg=10k ? top view a l c b d g h j f k e 1 2 3 1 2 3 sot-23 millimete r millimete r ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
elektronische bauelemente 2sa1162 -0.15a, -50v pnp silicon general purpose transistor 31-dec-2010 rev. c page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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